Van der Waals interfaces of high-Tc crystalline Bi-2212 with semiconductor n-GaAs for teasing out superconductor electric field screening lengths
Date/Time: 14:30 24-Jun-2019
Abstract:
Title: Van der Waals interfaces of high-Tc crystalline Bi-2212 with semiconductor n-GaAs for teasing out superconductor electric field screening lengths
Authors: Arthur F. Hebard (1), Ang J. Li (1,2), Xiaochen Zhu (1) and Gregory Stewart (1)
(1) University of Florida, FL; (2) GlobalFoundries, NY
The crystalline layered high-Tc superconductor Bi-2212 can be easily cleaved into smoothly faceted flakes which, when placed into intimate physical contact with a variety of layered materials or bulk semiconductors, form heterogeneous junctions. For the Bi-2212/n-GaAs Schottky barrier junctions, modifications to the thermionic emission equation provide an excellent description of the I-V characteristics even at low temperatures where tunneling is found by differential conductance spectroscopy measurements to be important. Capacitance measurements under reverse bias suggest an unexpectedly long electric field screening length in the superconductor.
Authors: Arthur F. Hebard (1), Ang J. Li (1,2), Xiaochen Zhu (1) and Gregory Stewart (1)
(1) University of Florida, FL; (2) GlobalFoundries, NY
The crystalline layered high-Tc superconductor Bi-2212 can be easily cleaved into smoothly faceted flakes which, when placed into intimate physical contact with a variety of layered materials or bulk semiconductors, form heterogeneous junctions. For the Bi-2212/n-GaAs Schottky barrier junctions, modifications to the thermionic emission equation provide an excellent description of the I-V characteristics even at low temperatures where tunneling is found by differential conductance spectroscopy measurements to be important. Capacitance measurements under reverse bias suggest an unexpectedly long electric field screening length in the superconductor.
Authors
Hebard Arthur F
(Presenter)
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(Presenter)