B. Altshuler, Columbia University
A. Andreev, University of Washington & Skoltech
K. Behnia, Ecole superieure de Physique et de Chimie, Paris
G. Boebinger, NHMFL, Tallahassee
I. Burmistrov, Landau Institute
A. Chaplik, Institute of Semiconductors Physics, Novosibirsk
M. Chernikov, NUST "MISiS"
A. Chubukov, University of Minnesota
V. Dobrosavlevich, Florida State University, Tallahassee
M. Dzero, Kent State University
K. Efetov, Ruhr University Bochum
G. M. Eliashberg, Landau Institute
G. Falkovich, Weizmann Institute
A. Finkel'stein, Texas A&M University & Weizmann Institute
V. Galitskii, University of Maryland
M. Gershenson, Rutgers University
L. Glazman, Yale University
P. Grigoriev, Landau Institute
A. Hebbard, University of Florida
M. Houzet, CEA Grenoble
L. Ioffe, Google
A. Ioselevich, HSE Physics & Landau Institute
A. Kapitulnik, Stanford University
A. Kitaev, California Institute of Technology
T. M. Klapwijk, Delft University of Technology
V. Kravtsov, ICTP Trieste
A. Lebed`, University of Arizona, Tucson
A. Levchenko, University of Wisconsin-Madison
H. von Loehneysen, Karlsruhe Institute of Technology
Yu. Makhlin, HSE Physics & Landau Institute
V. Mineev, CEA Grenoble and Landau Institute
Yu. Oreg, Weizmann Institute
P. Ostrovsky, Landau Institute
V. Pokrovsky, Texas A&M University and Landau Institute
G. Refael, California Institute of Technology
A. Rogachev University of Utah
B. Sacepe, Neel Institute, CNRS Grenoble
J. Sauls, Northwestern University
J. Schmalian, Karlsruhe Institute of Technology
A. Shnirman, Karlsruhe Institute of Technology
M. Skvortsov, Skoltech & Landau Institute
G. Teitelbaum, E.K. Zavoiskii Institute for Technical Physics, Kazan`
K. Tikhonov, Landau Institute
C. Varma, University of California, Berkeley
G. Volovik, Aalto University Espoo and Landau Institute